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| inchange semiconductor product specification 1 silicon pnp darlington power transistors 2SB1625 description ? ? with to-3pml package ? complement to type 2sd2494 applications ? audio ,regulator and general purpose pinning pin description 1 base 2 collector 3 emitter maximum absolute ratings(tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -110 v v ceo collector-emitter voltage open base -110 v v ebo emitter-base voltage open collector -5 v i c collector current -6 a i b base current -1 a p c collector power dissipation t c =25 ?? 60 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon pnp darlington power transistors 2SB1625 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo collector-emitter breakdown voltage i c =-50ma; i b =0 -110 v v cesat collector-emitter saturation voltage i c =-5 a;i b =-5m a -2.5 v v besat base-emitter saturation voltage i c =-5 a;i b =-5m a -3.0 v i cbo collector cut-off current v cb =-110v; i e =0 -100 | a i ebo emitter cut-off current v eb =-5v; i c =0 -100 | a h fe dc current gain i c =-5a ; v ce =-4v 5000 f t transition frequency i c =0.5a ; v ce =-12v 100 mhz c ob output capacitance i e =0; v cb =-10v;f=1mhz 110 pf switching times t on turn-on time 1.1 | s t s storage time 3.2 | s t f fall time i c =-5a;r l =6 |? i b1 =-i b2 =-5ma v cc =-30v 1.1 | s ? h fe classifications o p y 5000-12000 6500-20000 15000-30000 inchange semiconductor product specification 3 silicon pnp darlington power transistors 2SB1625 package outline fig.2 outline dimensions |
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